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| irl3803vs IRL3803VL hexfet ? power mosfet parameter typ. max. units r jc junction-to-case ??? 0.74 r ja junction-to-ambient (pcb mounted, steady state) ??? 40 thermal resistance www.irf.com 1 v dss = 30v r ds(on) = 5.5m ? i d = 140a s d g advanced hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the d 2 pak is a surface mount power package capable of accommodating die sizes up to hex-4. it provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. the d 2 pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0w in a typical surface mount application. description absolute maximum ratings parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 140 i d @ t c = 100c continuous drain current, v gs @ 10v 110 a i dm pulsed drain current 470 p d @t a = 25c power dissipation 3.8 w p d @t c = 25c power dissipation 200 w linear derating factor 1.4 w/c v gs gate-to-source voltage 16 v i ar avalanche current 71 a e ar repetitive avalanche energy 20 mj dv/dt peak diode recovery dv/dt 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) logic-level gate drive advanced process technology surface mount (irl3803vs) low-profile through-hole (IRL3803VL) 175c operating temperature fast switching fully avalanche rated d 2 pak irl3803vs to-262 IRL3803VL c/w pd - 94735
2 www.irf.com s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source c urrent integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.2 v t j = 25c, i s = 71a, v gs = 0v t rr reverse recovery time ??? 52 78 ns t j = 25c, i f = 71a q rr reverse recovery charge ??? 91 140 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 140 470 repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) starting t j = 25c, l = 160h r g = 25 ? , i as = 71a, v gs =10v (see figure 12) i sd 71a di/d 110a/s, v dd v (br)dss , t j 175c pulse width 400s; duty cycle 2%. this is a typical value at device destruction and represents operation outside rated limits. this is a calculated value limited to t j = 175c . calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a. uses irl3803 data and test conditions. this is applied to d 2 pak, when mounted on 1" square pcb (fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 30 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.028 ??? v/c reference to 25c, i d = 1ma ??? ??? 5.5 v gs = 10v, i d = 71a ??? ??? 7.5 v gs = 4.5v, i d = 59a v gs(th) gate threshold voltage 1.0 ??? ??? v v ds = v gs , i d = 250a g fs forward transconductance 82 ??? ??? s v ds = 25v, i d = 71a ??? ??? 25 a v ds = 30v, v gs = 0v ??? ??? 250 v ds = 24v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 16v gate-to-source reverse leakage ??? ??? -100 na v gs = -16v q g total gate charge ??? ??? 76 i d = 71a q gs gate-to-source charge ??? ??? 19 nc v ds = 24v q gd gate-to-drain ("miller") charge ??? ??? 35 v gs = 4.5v, see fig. 6 and 13 t d(on) turn-on delay time ??? 16 ??? v dd = 15v t r rise time ??? 180 ??? i d = 71a t d(off) turn-off delay time ??? 29 ??? r g = 1.3 ? t f fall time ??? 37 ??? v gs = 4.5v, see fig. 10 between lead, 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 3720 ??? v gs = 0v c oss output capacitance ??? 1480 ??? v ds = 25v c rss reverse transfer capacitance ??? 270 ??? pf ? = 1.0mhz, see fig. 5 e as single pulse avalanche energy ??? 1560 400 mj i as = 71a, l = 0.16mh s d g electrical characteristics @ t j = 25c (unless otherwise specified) r ds(on) static drain-to-source on-resistance l s internal source inductance ??? 7.5 ??? l d internal drain inductance ??? 4.5 ??? i dss drain-to-source leakage current m ? www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.7v 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.7v 10 100 1000 2.5 3.5 4.5 5.5 6.5 v = 15v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 120a 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 1000 2000 3000 4000 5000 6000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 20 40 60 80 100 0 3 6 9 12 15 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 71a v = 15v ds v = 24v ds 0.1 1 10 100 1000 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 v ds , drain-tosource voltage (v) 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 40 80 120 160 t , case temperature ( c) i , drain current (a) c d limited by package v ds 90% 10% v gs t d(on) t r t d(off) t f 1 0.1 % + - 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - t p v (br)dss i as ! " #$ r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 200 400 600 800 1000 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 29a 50a 71a www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? ? ? !" # % $" " % $ #" " # ? %&' ? ( ) ? %&% * + $ #,- % #) " ,,)!$. &' %%% /0,%+"% ""# for n-channel hexfet ? power mosfets 8 www.irf.com f 530s t his is an irf 530s wit h lot code 8024 as s e mb le d on ww 02, 2000 in the ass embly line "l" as s e mb l y lot code int ernational rectifier logo part number dat e code year 0 = 2000 we e k 02 line l dimensions are shown in millimeters (inches) www.irf.com 9 to-262 package outline dimensions are shown in millimeters (inches) to-262 part marking information e x a m p l e : t h i s i s a n i r l 3 1 0 3 l l o t c o d e 1 7 8 9 a s s e m b l y p a r t n u m b e r d a t e c o d e w e e k 1 9 l i n e c l o t c o d e y e a r 7 = 1 9 9 7 a s s e m b l e d o n w w 1 9 , 1 9 9 7 i n t h e a s s e m b l y l i n e " c " l o g o r e c t i f i e r i n t e r n a t i o n a l igbt 1- gate 2- collector 3- emitter 10 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 07/03 dimensions are shown in millimeters (inches) 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. |
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